LOGO
LOGO
MT53B512M64D8HR-053 WT ES:B Image

img for reference only

Mfr. #:
MT53B512M64D8HR-053 WT ES:B
Mfr.:
Micron
Batch:
23+
Description:
SDRAM - Mobile LPDDR4 Memory IC 32Gb (512M x 64) 1.866 GHz
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Micron Technology Inc.
Series -
Package Tray
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4
Memory Capacity 32Gb (512M x 64)
Memory Interface -
Clock Frequency 1.866 GHz
Write Cycle Time - Word, Page -
Voltage- Supply 1.1V
Operating Temperature -30°C ~ 85°C (TC)
Mounting Type -
Package/Case -
Supplier Device Package -
Related models
  • MT29F4G08ABBDAHC:D TR

    Flash - NAND Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (10.5x13)

  • MT29F4G16ABADAWP-IT:D TR

    Flash - NAND Memory IC 4Gb (256M x 16) Parallel 48-TSOP I

  • M29W320DB70N3F TR

    FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 70 ns 48-TSOP I

  • M29W320DT70N3F TR

    FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 70 ns 48-TSOP I

  • M29W400FB55N3F TR

    FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Parallel 55 ns 48-TSOP I

  • M29W160EB70N3E

    FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Parallel 70 ns 48-TSOP

  • M29W160ET70N3E

    FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Parallel 70 ns 48-TSOP

  • JS28F00AM29EWLA

    FLASH - NOR Memory IC 1Gb ​​(128M x 8, 64M x 16) Parallel 110 ns 56-TSOP

Micron hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd