LOGO
LOGO
M58LT256KST7ZA6E Image

img for reference only

Mfr. #:
M58LT256KST7ZA6E
Mfr.:
Micron
Batch:
23+
Description:
FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 52 MHz 70 ns 64-TBGA (10x13)
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Micron Technology Inc.
Series -
Package Tray
Memory Type Non-volatile
Memory Format Flash Memory
Technology FLASH - NOR
Memory Capacity 256Mb (16M x 16)
Memory Interface Parallel
Clock Frequency 52 MHz
Write Cycle Time - Word, Page 70ns
Access Time 70 ns
Voltage - Supply 1.7V ~ 2V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package/Case 64-TBGA
Supplier Device Package 64-TBGA (10x13)
Related models
  • MT47R64M16HR-25:H

    SDRAM - DDR2 Memory IC 1Gb ​​(64M x 16) Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

  • MT47R64M16HR-3:H

    SDRAM - DDR2 Memory IC 1Gb ​​(64M x 16) Parallel 333 MHz 450 ps 84-FBGA (8x12.5)

  • MT46V32M16P-6T L IT:F

    SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 167 MHz 700 ps 66-TSOP

  • MT48H16M16LFBF-6 IT:H

    SDRAM - Mobile LPSDR Memory IC 256Mb (16M x 16) Parallel 166 MHz 5 ns 54-VFBGA (8x9)

  • MT48H16M16LFBF-6:H

    SDRAM - Mobile LPSDR Memory IC 256Mb (16M x 16) Parallel 166 MHz 5 ns 54-VFBGA (8x9)

  • MT48H16M16LFBF-75 IT:H

    SDRAM - Mobile LPSDR Memory IC 256Mb (16M x 16) Parallel 133 MHz 5.4 ns 54-VFBGA (8x9)

  • MT47H64M16HR-3:H

    SDRAM - DDR2 Memory IC 1Gb ​​(64M x 16) Parallel 333 MHz 450 ps 84-FBGA (8x12.5)

  • MT47H64M8CF-25E IT:G

    SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400 MHz 400 ps 60-FBGA (8x10)

Micron hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd