LOGO
LOGO
MT47H64M8CF-25E AIT:G Image

img for reference only

Mfr. #:
MT47H64M8CF-25E AIT:G
Mfr.:
Micron
Batch:
23+
Description:
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400 MHz 400 ps 60-FBGA (8x10)
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Micron Technology Inc.
Series Automotive, AEC-Q100
Packaging Bulk
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Capacity 512Mb (64M x 8)
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Access Time 400 ps
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature -40°C ~ 95°C (TC)
Mounting Type Surface Mount
Package/Case 60-TFBGA
Supplier Device Package 60-FBGA (8x10)
Related models
  • PC28F256P30BFA

    FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 52 MHz 100 ns 64-EasyBGA (10x13)

  • TE28F256J3F105A

    FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Parallel 105 ns 56-TSOP

  • JS28F256M29EWLA

    FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Parallel 110 ns 56-TSOP

  • JS28F256P30TFA

    FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 40 MHz 110 ns 56-TSOP

  • JS28F256P30BFA

    FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 40 MHz 110 ns 56-TSOP

  • TE28F256P30TFA

    FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 40 MHz 110 ns 56-TSOP

  • TE28F256P30BFA

    FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 40 MHz 110 ns 56-TSOP

  • TE28F128P30T85A

    FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 40 MHz 85 ns 56-TSOP

Micron hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd