LOGO
LOGO
MT47H512M4THN-3:H Image

img for reference only

Mfr. #:
MT47H512M4THN-3:H
Mfr.:
Micron
Batch:
23+
Description:
SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333 MHz 450 ps 63-FBGA (8x10)
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Micron Technology Inc.
Series -
Packaging Tray
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Capacity 2Gb (512M x 4)
Memory Interface Parallel
Clock Frequency 333 MHz
Write Cycle Time - Word, Page 15ns
Access Time 450 ps
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package/Case 63-TFBGA
Supplier Device Package 63-FBGA (8x10)
Related models
  • M58WR032KB70ZB6Z

    FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

  • M58WR032KB70ZQ6Z

    FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 66 MHz 70 ns 88-VFBGA (8x10)

  • M58WR032KB7AZB6E

    FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

  • M39L0R8090U3ZE6E

    FLASH - NOR, Mobile LPDDR SDRAM Memory IC 256Mb (16M x 16), 512M (32M x 16) Parallel 70 ns 133-VFBGA (8x8)

  • M45PE10S-VMP6G

    FLASH - NOR Memory IC 1Mb (128K x 8) SPI 75 MHz 8-VFQFPN (6x5)

  • M58LT256KST7ZA6E

    FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 52 MHz 70 ns 64-TBGA (10x13)

  • M58LR256KT70ZQ5E

    FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 66 MHz 70 ns 88-TFBGA (8x10)

  • M58LT128KSB7ZA6E

    FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 52 MHz 70 ns 64-TBGA (10x13)

Micron hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd