LOGO
LOGO
MT29F512G08EBHAFJ4-3ITFES:A Image

img for reference only

Mfr. #:
MT29F512G08EBHAFJ4-3ITFES:A
Mfr.:
Micron
Batch:
23+
Description:
FLASH - NAND (TLC) Memory IC 512Gb (64G x 8) Parallel 333 MHz 132-VBGA (12x18)
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Micron Technology Inc.
Series -
Package Tray
Memory Type Non-Volatile
Memory Format Flash Memory
Technology FLASH - NAND (TLC)
Memory Capacity 512Gb (64G x 8)
Memory Interface Parallel
Clock Frequency 333 MHz
Write Cycle Time - Word, Page -
Voltage - Supply 2.5V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package/Case 132-VBGA
Supplier Device Package 132-VBGA (12x18)
Related models
  • MT29F4G08ABBDAHC:D TR

    Flash - NAND Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (10.5x13)

  • MT29F4G16ABADAWP-IT:D TR

    Flash - NAND Memory IC 4Gb (256M x 16) Parallel 48-TSOP I

  • M29W320DB70N3F TR

    FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 70 ns 48-TSOP I

  • M29W320DT70N3F TR

    FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 70 ns 48-TSOP I

  • M29W400FB55N3F TR

    FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Parallel 55 ns 48-TSOP I

  • M29W160EB70N3E

    FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Parallel 70 ns 48-TSOP

  • M29W160ET70N3E

    FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Parallel 70 ns 48-TSOP

  • JS28F00AM29EWLA

    FLASH - NOR Memory IC 1Gb ​​(128M x 8, 64M x 16) Parallel 110 ns 56-TSOP

Micron hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd